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Freescale Semiconductor Technical Data
Document Number: MMG3004NT1 Rev. 0, 11/2005
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2200 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 400 - 2200 MHz * P1dB: 27 dBm @ 2140 MHz * Small - Signal Gain: 16 dB @ 2140 MHz * Third Order Output Intercept Point: 44 dBm @ 2140 MHz * Single 5 Volt Supply * Internally Prematched to 50 Ohms * Pb - Free Leads. RoHS Compliant. * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3004NT1
400 - 2200 MHz, 16 dB 27 dBm InGaP HBT
CASE 1543 - 02 PQFN 5x5 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 19.5 - 7.5 - 10 27 44 1960 MHz 16.5 -8 - 12 27 44 2140 MHz 16 -8 - 12 27 44 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage (2) Supply Current RF Input Power Storage Temperature Range Junction Temperature (3)
(2)
Symbol VDC IDC Pin Tstg TJ
Value 6 400 18 - 65 to +150 150
Unit V mA dBm C C
2. Continuous voltage and current applied to device. 3. For reliable operation, the junction temperature should not exceed 150C.
1. VDC = 5 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 250 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (4) 33 Unit C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MMG3004NT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF IDC VDC Min 15 -- -- -- -- -- 225 -- Typ 16 -8 - 12 27 44 3.4 250 5 Max -- -- -- -- -- -- 275 -- Unit dB dB dB dBm dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3004NT1 2 RF Device Data Freescale Semiconductor
Table 5. Functional Pin Description
Name RFin RFOUT/ VCC VCC VBA GND Pin Number 2, 3, 4 10, 11, 12 14 16 Backside Center Metal Description VBA RF input for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. Collector voltage supply. Bias voltage supply. The center metal base of the PQFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. RFin RFin RFin 1 2 3 4 5 6 7 8 16 15 VCC 14 13 12 11 10 9 RFout RFout RFout
(Top View)
Figure 1. Pin Connections
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
MMG3004NT1 RF Device Data Freescale Semiconductor 3
50 OHM TYPICAL CHARACTERISTICS
300 ICC, COLLECTOR CURRENT (mA) 250 200 150 100 50 VCC = 5 Vdc 0 0 1 2 3 4 5 VBA, BIAS VOLTAGE (V) 103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 250 mA MTTF (YEARS) 105 106
104
Figure 2. Collector Current versus Bias Voltage
Figure 3. MTTF versus Junction Temperature
MMG3004NT1 4 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 900 MHz
VSUPPLY R2 R1
C3
C4 1 16 15 14 13 12 Z6 3 4 5 6 DUT 7 8 Z6 Z7 Z8 Z9 PCB 11 10 9 Z7 L1
C5
C6
RF INPUT
2 Z1 C1 C7 C8 Z2 Z3 Z4 L2 Z5
Current Mirror
Z8 L3
Z9
Z10 C2
Z11
RF OUTPUT
C9
C10
Z1, Z11 Z2, Z10 Z3 Z4 Z5
0.140 0.060 0.192 0.055 0.084
x 0.028 Microstrip x 0.028 Microstrip x 0.028 Microstrip x 0.028 Microstrip x 0.028 Microstrip
0.089 x 0.028 Microstrip 0.051 x 0.028 Microstrip 0.055 x 0.028 Microstrip 0.112 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7
Figure 4. 50 Ohm Test Circuit Schematic
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3, C5 C4, C6 C7, C8 C9, C10 L1 L2, L3 R1 R2 Description 15 pF Chip Capacitors 0.01 F Chip Capacitors 0.1 F Chip Capacitors 2.2 pF Chip Capacitors 1.8 pF Chip Capacitors 33 nH Chip Inductor 3.9 nH Chip Inductors 22 Chip Resistor 0 Chip Resistor Part Number ECUV1H150JCV 0603A103JAT2A 0603A102JAT2A 06035J2R2BBT 06035J1R8BBT LL1608- FH33NJ LL1608- FH3N9S Manufacturer Panasonic AVX AVX AVX AVX Toko Toko
MMG3004NT1 RF Device Data Freescale Semiconductor 5
50 OHM APPLICATION CIRCUIT: 900 MHz
Vp
VCC R2
R1 C3 C4 RFin L2 L1
C5 C6
RFout
C1
C7
C8
L3
C9
C10
C2
MMG3004/5/6 Rev. 3
Figure 5. 50 Ohm Test Circuit Component Layout
MMG3004NT1 6 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
21 Gp, SMALL-SIGNAL GAIN (dB) 0
IRL, INPUT RETURN LOSS (dB)
20 TC = 25C 19 -40C 85C
-2
-4
-6 TC = 85C -8 VDC = 5 Vdc -40C 25C
18 VDC = 5 Vdc 17 840 870 900 f, FREQUENCY (MHz) 930 960
-10 840
870
900 f, FREQUENCY (MHz)
930
960
Figure 6. Small - Signal Gain (S21) versus Frequency
Figure 7. Input Return Loss (S11) versus Frequency
-5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB)
29
-7 TC = -40C -9 25C -11 85C
28
TC = 25C 85C -40C
27
26 VDC = 5 Vdc 25 840 870 900 f, FREQUENCY (MHz) 930 960
-13 VDC = 5 Vdc -15 840 870 900 f, FREQUENCY (MHz) 930 960
Figure 8. Output Return Loss (S22) versus Frequency
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 47 10
Figure 9. P1dB versus Frequency
45 NF, NOISE FIGURE (dB) TC = 25C 43 -40C 85C
8
6
TC = 85C -40C 25C
41
4
39 VDC = 5 Vdc 1 MHz Tone Spacing 37 840 870 900 f, FREQUENCY (MHz) 930 960
2 VDC = 5 Vdc 0 840 870 900 f, FREQUENCY (MHz) 930 960
Figure 10. Third Order Output Intercept Point versus Frequency
Figure 11. Noise Figure versus Frequency
MMG3004NT1 RF Device Data Freescale Semiconductor 7
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 VDC = 5 Vdc, IDC = 250 mA, f = 900 MHz Single-Carrier IS-95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-40
-35
VDC = 5 Vdc, IDC = 250 mA, f = 900 MHz Single-Carrier IS-95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth
-50
-40
-45
-60
TC = 85C 25C -40C
-50 TC = 85C -55 19 25C -40C 21 23 25 27 29
-70
-80 17
19
21
23
25
27
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 12. IS - 95 Adjacent Channel Power Ratio versus Output Power
Figure 13. IS - 95 Adjacent Channel Power Ratio versus Output Power
MMG3004NT1 8 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz
VSUPPLY R2 R1
C3
C4 1 16 15 14 13 12 Z5 3 11 DUT 6 7 8 Z5 Z6 Z7 PCB Z6 Z7 L1
C5
C6
RF INPUT
2 Z1 C1 C7 C8 4 5 Z1, Z9 Z2, Z8 Z3 Z4 0.140 0.060 0.259 0.080 x 0.028 Microstrip x 0.028 Microstrip x 0.028 Microstrip x 0.028 Microstrip Z2 Z3 Z4
Current Mirror
Z8 C2
Z9
RF OUTPUT
10 9
C9
C10
0.049 x 0.028 Microstrip 0.036 x 0.028 Microstrip 0.254 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7
Figure 14. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3, C5 C4, C6 C7, C10 C8 C9 L1 R1 R2 Description 15 pF Chip Capacitors 0.01 F Chip Capacitors 0.1 F Chip Capacitors 0.5 pF Chip Capacitors 2.7 pF Chip Capacitor 0.8 pF Chip Capacitor 33 nH Chip Inductor 22 Chip Resistor 0 Chip Resistor Part Number ECUV1H150JCV 0603A103JAT2A 0603A102JAT2A 06035J0R5BBT 06035J2R7BBT 06035J0R8BBT LL1608- FH33NJ Manufacturer Panasonic AVX AVX AVX AVX AVX Toko
MMG3004NT1 RF Device Data Freescale Semiconductor 9
50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz
Vp
VCC R2
R1 C3 C4 RFin L1
C5 C6
RFout
C1
C7
C8
C9
C10
C2
MMG3004/5/6 Rev. 3
Figure 15. 50 Ohm Test Circuit Component Layout
MMG3004NT1 10 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz
18 Gp, SMALL-SIGNAL GAIN (dB) 17 16 15 14 13 VDC = 5 Vdc 12 1900 1960 2020 2080 2140 2200 -10 1900 -5
IRL, INPUT RETURN LOSS (dB)
TC = 25C 85C -40C
-6
-7
-8
TC = 85C -40C 25C VDC = 5 Vdc 1960 2020 2080 f, FREQUENCY (MHz) 2140 2200
-9
f, FREQUENCY (MHz)
Figure 16. Small - Signal Gain (S21) versus Frequency
Figure 17. Input Return Loss (S11) versus Frequency
-5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB)
29
-7
28 TC = -40C 27 25C 26 VDC = 5 Vdc 25 1900 1960 2020 2080 2140 2200 85C
-9
-11
TC = -40C
-13 VDC = 5 Vdc -15 1900 1960 2020
85C
25C 2080 2140 2200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 18. Output Return Loss (S22) versus Frequency
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 47 10
Figure 19. P1dB versus Frequency
45 TC = 25C 43 -40C 41 85C VDC = 5 Vdc 1 MHz Tone Spacing 37 1900 1960 2020 2080 2140 2200 NF, NOISE FIGURE (dB)
8
6
4
TC = 85C -40C VDC = 5 Vdc 25C
39
2
0 1900
1960
2020
2080
2140
2200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 20. Third Order Output Intercept Point versus Frequency
Figure 21. Noise Figure versus Frequency
MMG3004NT1 RF Device Data Freescale Semiconductor 11
50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 VDC = 5 Vdc, IDC = 250 mA, f = 1960 MHz Single-Carrier IS-95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-40
-35
VDC = 5 Vdc, IDC = 250 mA, f = 1960 MHz Single-Carrier IS-95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth
-50
-40
-45 TC = 85C -50 -55 19 -40C 25C 21 23 25 27 29
-60
TC = 85C -40C
-70
25C
-80 17
19
21
23
25
27
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 22. IS - 95 Adjacent Channel Power Ratio versus Output Power
Figure 23. IS - 95 Adjacent Channel Power Ratio versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
-20
-30
-40 85C -50
TC = -40C
25C -60 VDC = 5 Vdc, IDC = 250 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 16 18 20 22 24 26
-70
Pout, OUTPUT POWER (dBm)
Figure 24. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power
MMG3004NT1 12 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S - Parameters at VDC = 5 Vdc, IDC = 250 mA, TC = 255C
f GHz 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 S11 |S11| 0.47850 0.52079 0.56232 0.60124 0.63724 0.67062 0.69942 0.72531 0.74778 0.76805 0.78656 0.80272 0.81645 0.82822 0.83744 0.84657 0.85407 0.86090 0.86535 0.86886 0.87175 0.87371 0.87541 0.87551 0.87377 0.87157 0.86970 0.87145 0.87360 0.87554 0.87801 0.87960 0.88138 0.88346 0.88598 0.88778 0.88960 0.89142 0.89304 0.89418 0.89508 0.89600 0.89634 0.89699 0.89702 - 144.63 - 147.32 - 150.13 - 152.97 - 155.74 - 158.39 - 160.88 - 163.15 - 165.23 - 167.12 - 168.87 - 170.48 - 171.90 - 173.17 - 174.28 - 175.33 - 176.30 - 177.20 - 178.01 - 178.83 - 179.63 179.54 178.70 177.79 176.80 175.77 174.61 173.30 172.88 171.27 170.47 169.84 168.45 167.07 166.55 165.97 164.20 163.32 162.24 161.03 160.65 159.14 158.47 157.61 155.66 |S21| 9.45303 9.03153 8.58464 8.14110 7.71607 7.30892 6.89268 6.49002 6.11441 5.76070 5.45265 5.15936 4.88436 4.62846 4.39398 4.19167 4.02364 3.94135 3.91900 3.85851 3.79219 3.72665 3.67139 3.61378 3.54706 3.49666 3.43623 3.37777 3.29315 3.23698 3.18392 3.12886 3.07394 3.02285 2.96910 2.91830 2.86794 2.82292 2.77684 2.72905 2.68145 2.63323 2.58664 2.54289 2.50232 S21 155.76 149.91 144.58 139.74 135.24 131.03 127.12 123.55 120.27 117.18 114.30 111.47 108.89 106.51 104.33 102.27 100.34 98.55 96.85 95.17 93.55 91.87 90.24 88.58 86.86 85.07 83.27 81.56 79.82 78.19 76.44 74.79 73.09 70.94 69.97 68.84 67.75 66.45 64.77 63.07 61.37 59.64 57.91 56.14 54.31 |S12| 0.01650 0.01507 0.01400 0.01312 0.01238 0.01178 0.01127 0.01089 0.01059 0.01038 0.01026 0.01020 0.01021 0.01027 0.01040 0.01057 0.01077 0.01104 0.01133 0.01170 0.01213 0.01260 0.01314 0.01374 0.01441 0.01515 0.01593 0.01667 0.01704 0.01742 0.01787 0.01827 0.01868 0.01909 0.01943 0.01979 0.02016 0.02056 0.02099 0.02145 0.02191 0.02243 0.02297 0.02356 0.02424 S12 - 37.55 - 32.08 - 27.65 - 23.56 - 19.64 - 15.72 - 11.78 - 7.87 - 3.96 - 0.12 3.42 6.89 10.11 13.05 15.81 18.21 20.46 22.47 24.29 25.89 27.37 28.59 29.59 30.35 31.03 31.39 31.55 31.82 32.13 32.44 32.72 33.03 33.51 33.93 34.35 34.80 35.21 35.61 35.94 36.24 36.53 36.76 36.91 37.09 37.17 |S22| 0.72316 0.72165 0.72111 0.72123 0.72227 0.72607 0.72827 0.73132 0.73450 0.73738 0.74039 0.74323 0.74517 0.74685 0.74824 0.74859 0.74854 0.74717 0.74526 0.74174 0.73677 0.72983 0.72142 0.71266 0.70274 0.68899 0.67338 0.65921 0.64230 0.63500 0.62803 0.62082 0.61361 0.60658 0.59945 0.59252 0.58583 0.57935 0.57343 0.56807 0.56323 0.55888 0.55599 0.55378 0.55279 S22 - 177.17 - 179.65 178.58 177.23 176.23 175.49 174.79 174.32 173.93 173.62 173.40 173.19 173.02 172.87 172.75 172.62 172.44 172.28 172.02 171.79 171.52 171.23 171.00 170.74 170.34 169.84 169.39 168.89 168.30 167.61 166.69 165.48 164.62 163.92 162.22 160.49 158.82 155.15 153.51 150.95 147.48 144.06 141.76 138.51 137.25
MMG3004NT1 RF Device Data Freescale Semiconductor 13
Table 10. Class A Common Emitter S - Parameters at VDC = 5 Vdc, IDC = 250 mA, TC = 255C (continued)
f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 S11 |S11| 0.89704 0.89673 0.89666 0.89604 0.89565 0.89574 0.89516 0.89417 0.89358 0.89313 0.89241 153.55 151.36 149.04 147.95 146.13 144.58 142.97 141.35 139.74 137.08 135.52 |S21| 2.46083 2.41952 2.37843 2.33835 2.29930 2.26245 2.22577 2.18910 2.15463 2.12107 2.09065 S21 52.48 50.63 48.76 46.85 44.91 42.98 41.05 39.16 37.28 35.40 33.50 |S12| 0.02497 0.02577 0.02662 0.02748 0.02839 0.02929 0.03020 0.03111 0.03203 0.03295 0.03387 S12 37.10 36.86 36.46 35.86 35.08 34.17 33.15 32.05 30.83 29.56 28.22 |S22| 0.55229 0.55220 0.55253 0.55292 0.55313 0.55301 0.55285 0.55271 0.55189 0.55130 0.55001 S22 136.08 134.93 133.86 132.84 131.90 131.05 130.28 129.61 128.97 128.44 127.89
MMG3004NT1 14 RF Device Data Freescale Semiconductor
2.2 x 2.2
1.35
0.6 2.6 0.8 5.3
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER METAL GROUND LANDING PATTERN. 3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR ADDITIONAL PQFN PCB GUIDELINES.
Figure 25. Recommended Mounting Configuration
MMG3004NT1 RF Device Data Freescale Semiconductor 15
NOTES
MMG3004NT1 16 RF Device Data Freescale Semiconductor
NOTES
MMG3004NT1 RF Device Data Freescale Semiconductor 17
NOTES
MMG3004NT1 18 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
5
PIN 1 INDEX DETAIL G
0.15 C
2X
M
5 2.5
B
0.15 C
2X
M 0.1 C
NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 3. THE COMPLETE JEDEC DESIGNATOR FOR THIS PACKAGE IS: HF-PQFP-N. 4. COPLANARITY APPLIES TO LEADS AND DIE ATTACH PAD. 5. MINIMUM METAL GAP SHOULD BE 0.25MM
2.2 2.0
2.20 1.95
16X
0.05 C
4
(0.55) 2.20 1.95 2.2 1.8 0.1
16 1
(0.8)
VIEW ROTATED 90_ CLOCKWISE
C DETAIL G
SEATING PLANE
EXPOSED DIE ATTACH PAD 14 13
1
M
CAB
DETAIL M 12X (0.05)
0.92 0.78 0.1 M C A B 0.05 M C 0.7 (0.2) 0.3 (0.2) 0.92 0.78 0.1 M C A B 0.05 M C
1 2.2 1.8 0.1
M 8X 0.8 9 5
CAB
12X 0.62
8
6
0.48
20X 1.20
0.95
0.1 M C A B 0.05 M C VIEW M - M DETAIL M
12X 0.37
0.23
0.7 0.3
CORNER CONFIGURATION
CASE 1543 - 02 ISSUE B PQFN 5x5 PLASTIC
MMG3004NT1 RF Device Data Freescale Semiconductor 19
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MMG3004NT1
Rev. 20 0, 11/2005 Document Number: MMG3004NT1
RF Device Data Freescale Semiconductor

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